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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
1.1
2.0
1.0
1.5
1.0
T J , Junction Temperature [ C ]
T J , Junction Temperature [ C ]
0.9
0.8
-100
*Notes:
1. V GS = 0V
2. I D = 1mA
-50 0 50 100 150
o
200
0.5
0.0
-100
*Notes:
1. V GS = 10V
2. I D = 12.5A
-50 0 50 100 150 200
o
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
1. T C = 25 C
2. T J = 150 C
100
10
1
0.1
Operation in This Area
is Limited by R DS(on)
*Notes:
o
o
DC
1ms
100 μ s
10ms
10 μ s
30
25
20
15
10
5
T C , Case Temperature [ C ]
0.01
1
3. Single Pulse
10 100
V DS , Drain-Source Voltage [V]
1000
0
25
50 75 100 125
o
150
Figure 11. Transient Thermal Response Curve
1
0.5
0.2
0.1
0.1
0.05
P DM
0.01
0.02
0.01
*Notes:
t 1
t 2
1. Z θ JC (t) = 0.58 C/W Max.
Single pulse
o
2. Duty Factor, D = t 1 /t 2
1E-3
10
10
10
10
10
10
10
0.001
-5
-4
-3
-2
3. T JM - T C = P DM * Z θ JC (t)
-1 0
1
t 1 , Rectangular Pulse Duration [sec]
Rectangular Pulse Duration [sec]
?2010 Fairchild Semiconductor Corporation
FCI25N60N Rev. C1
4
www.fairchildsemi.com
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